The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1995
Filed:
Nov. 10, 1992
Applicant:
Inventors:
Eray S Aydil, Goleta, CA (US);
Richard A Gottscho, Maplewood, NJ (US);
Zhen-Hong Zhou, Bronx, NY (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 437937 ; 437946 ; 148D / ; 134-1 ;
Abstract
A novel vapor phase Si cleaning process comprises simultaneous exposure of the Si surface to a flux of neutral atomic hydrogen and to a flux of ionized particles. The former flux is substantially derived from a plasma, typically a microwave plasma, that is spaced apart from a second plasma, typically a RF plasma, from which the ionized particles are derived. The novel method can be implemented at relatively low cost and facilitates adjustment of the ratio between the two fluxes to result in optimal removal of, e.g., native oxide from the surface.