The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1995
Filed:
Nov. 13, 1992
Albert Zarka, Paris, FR;
Jacques Detaint, Villemomble, FR;
Jacquie Schwartzel, Palaiseau, FR;
Yves Toudic, Lannion, FR;
Bernard Capelle, Antony, FR;
Yun L Zheng, Ivry sur Seine, FR;
Etienne Philippot, Saint Mathieu de Trevier, FR;
Xavier Buisson, Annecy le Vieux, FR;
Roger Arnaud, Crangevrier, FR;
France Telecom, Paris, FR;
Centre National de la Recherche Scientifique (CNRS), Paris, FR;
Abstract
A method of obtaining a crystal by crystal growth in the liquid phase from a seed in the form of a plate taken from a primary crystal, which method comprises at least two steps constituted firstly by forming first crystal growth to obtain a secondary crystal from a first seed taken from said primary crystal in a first growth zone, and secondly in performing second crystal growth from a second seed taken from said secondary crystal in a second growth zone, said first and second seeds being selected so that few of the dislocations that they contain propagate respectively into the second zone of the secondary crystal or into the first growth zone of the resulting crystal. According to the invention said first and second crystal growth steps are performed in different growth directions. Application to monocrystals of quartz, or of materials that are isomorphs of quartz, such as berlinite, and that are intended for use in making electronic components, in particular oscillators and filters.