The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1995
Filed:
Jan. 03, 1994
Keizo Ohtani, Kanagawa, JP;
Yamatake-Honeywell Co., Ltd., Tokyo, JP;
Abstract
A pressure detection gage for a semiconductor pressure sensor includes a gage portion, a pair of lead out portions, and an isolation layer. The gage portion is formed on the upper surface of a semiconductor substrate of the first conductivity type, has a predetermined sheet resistance, and serves as a piezoelectric region. The pair of lead out portions are formed as heavily doped semiconductor regions of the second conductivity type on the surface of the semiconductor substrate and are electrically connected to two ends of the gage portion. The isolation layer is formed from a lightly doped semiconductor region of the second conductivity type formed in the semiconductor substrate to surround the lead out portions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile