The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
Nov. 12, 1993
Ken-ichi Oyama, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In order to suppress dispersion of threshold level voltages upon erasure of a large number of cells constituted from FETs having a floating gate electrode, drain electrode D, source electrode S and substrate Sub of each memory cell, all of the above electrodes are set to 0 V while a pulse of -19 V and a pulse width of 0.01 second is applied to control gate electrode CG to remove electrons accumulated in floating gate electrode FG by an F-N tunnel current. Then, while drain electrode D, source electrode S and substrate Sub are kept set to 0 V, another pulse of 14 V and a pulse width of 0.1 second is applied to control gate electrode CG to effect injection of electrons into floating gate electrode FG by the F-N tunnel current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile