The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
Jan. 25, 1993
Satoshi Makio, Kumagaya, JP;
Fumio Nitanda, Fukaya, JP;
Yasuhiro Furukawa, Fukaya, JP;
Kohei Ito, Fukaya, JP;
Masazumi Sato, Fukaya, JP;
Kazutami Kawamoto, Kanagawa, JP;
Kenchi Ito, Kokubunji, JP;
Hitachi Metals, Ltd., Tokyo, JP;
Hitachi Ltd., Tokyo, JP;
Abstract
Using an LiTaO.sub.3 or LiNbO.sub.3 substrate, a proton exchange layer in a grid pattern, namely sprout areas of polarization inversion, is firstly, formed on the surface of said substrate and, after formation of the pattern, heat treatment is executed at a temperature of 200.degree. C. or more and for a holding time of 10 minutes or less. By maintaining the temperature gradient up to said heat treatment point at 50.degree. C./min. or steeper and by maintaining the temperature decrease rate from said heat treatment point at 50.degree. C./min. or faster, polarization inverted areas are formed downwards from the proton exchanged areas, while in addition to making the top ends of said polarization inverted areas into an acute angle, the depth/weight ratio of the polarization inverted grids being formed is made to exceed 1, thus enabling the production of a high-efficiency SHG element.