The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
Mar. 04, 1993
Applicant:
Inventors:
Shigeki Komori, Hyogo, JP;
Katsuhiro Tsukamoto, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01G / ; G11C / ;
U.S. Cl.
CPC ...
257306 ; 257296 ; 257385 ; 257379 ; 257756 ; 361311 ; 365182 ;
Abstract
A lower electrode of a capacitor for use in a semiconductor device includes a first semiconductor layer having a predetermined impurity concentration and a second semiconductor layer having an impurity concentration higher than that of the first semiconductor layer. As a result, intensification of an electric field at an end portion of the capacitor can be reduced. In addition, a word line is formed of a buffer layer and a main conductor layer to reduce a parasitic capacitance between the lower electrode of the capacitor and the word line.