The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
Jun. 23, 1994
R Mark Boysel, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for producing a vacuum microelectronics device (10) on a substrate (12) and insulating dielectric (14) first forms an electrode base (16) on the insulating dielectric (14). Next, electrode base (16) is covered with a first organic spacer (42) having an aperture (44) for exposing a portion of electrode base (16). Next, a metal layer (46) is applied over organic spacer (42) to form emitter (18) within aperture (44). After removal of organic spacer (42) and metal layer (46), a second organic spacer (44) and a grid material (20) are applied over emitter (18) and electrode base (16). Next, a third organic spacer (50) and an anode metal (22) with access apertures (34) and (36) are placed over the structure. After removing organic spacers (48) and (50), anode metal (22) is sealed with metal (26) to close off access apertures (34) and (36). The result is a vacuum microelectronics device (10) usable is a triode or diode.