The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1995
Filed:
May. 25, 1993
Kunihiro Kasai, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A thin film transistor includes a semiconductor thin film formed with a source region and a drain region at opposite end portions thereof and having an offset region near at the drain region, a gate electrode formed above the region between the source region and the offset region of the semiconductor thin film, with a gate insulating film being interposed, and a conductive layer formed above the gate electrode or under the semiconductor thin film, with an insulating film being interposed, the conductive layer being applied with generally the same potential as the gate electrode, wherein the resistance value of the offset region is controlled by the potential of the conductive layer. The gate electrode may be formed under the semiconductor thin film. In this case, the conductive layer is formed above the semiconductor thin film or under the gate electrode, with an insulating film being interposed. An SRAM is also provided which uses a thin film transistor constructed as above.