The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
Mar. 14, 1994
Takehiro Kakizaki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A plurality of signal electrodes D arranged in parallel to each other are formed on a major surface of a first substrate 4. A second substrate 7 is disposed face to face to the first substrate. A plurality of plasma electrodes 9 arranged in parallel to each other and intersecting the signal electrodes D are formed on an inner surface of the second substrate 7. The plasma electrodes 9 are covered with an insulating film 10 for improvement of corrosion resistance. Instead of the insulating film, it is also preferable to form the plasma electrodes 9 themselves by a chemically inactive metallic film. An electro-optical material (e.g.liquid crystal) layer 6 is sandwiched between the first substrate 4 and the second substrate 7. A plasma chamber 11 is formed between the liquid crystal layer 6 and the second substrate 7, and filled with an ionizable gas. The gas is selectively ionized by the discharge between the two adjacent plasma electrodes 9. The liquid crystal layer 6 is driven with the discharge regions 12 at which the ionized gas is localized as the scanning unit. Further, an aperture communicating with the open air is formed in the plasma chamber 11 for improvement of pressure resistance. Since the corrosion resistance of the plasma electrodes can be increased, the plasma cell structure can be simplified and further the pressure resistance can be improved.