The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
Jun. 03, 1993
Mitsuya Kinoshita, Hyogo, JP;
Tatsuo Okamoto, Hyogo, JP;
Hideaki Arima, Hyogo, JP;
Atsushi Hachisuka, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The semiconductor memory device includes a semiconductor substrate 1 having a conductive layer 6 formed on its main surface. Word lines 4c, 4d and a bit line 11 is formed on the semiconductor substrate. Insulating films 8, 12 are provided to cover the word lines 4c, 4d and the bit line 11. A barrier film 14 is provided on the insulating films 8, 12 for protecting the insulating films 8, 12 from etchant. A cylindrical storage node 170 is electrically connected to the conductive layer 6. The cylindrical storage node 170 includes a bottom conductive portion 17a and a sidewall conductive portion 17b. An outer surface of the storage node 170 is covered with a capacitor insulating film 112. The outer surface of the cylindrical storage node 170 is covered with a cell plate 22, with the capacitor insulating film 112 interposed therebetween.