The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 1995

Filed:

May. 20, 1993
Applicant:
Inventors:

Dean P Neikirk, Austin, TX (US);

Kiran K Gullapalli, Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 28 ; 257 17 ; 257 22 ; 257 39 ; 257183 ; 257655 ;
Abstract

Heterostructure barrier quantum well device with a super-lattice structure of alternating lightly doped and heavily doped spacer layers having multiple, stable current-voltage curves extending continuously through zero bias at ambient temperature. The device can be repetitively switched between the multiple current-voltage curves. Once placed on a particular curve, the device retains memory of the curve it has been set on, even if held at zero bias for extended periods of time. The device can be switched between current-voltage curve settings at higher positive or negative voltages and can be read at lower voltages. Switching between current-voltage curve settings can also be effected by additional terminal connection(s) to the spacer layer(s).


Find Patent Forward Citations

Loading…