The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
Nov. 26, 1993
Applicant:
Inventor:
Hidenobu Miyamoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437192 ; 437194 ; 437195 ;
Abstract
A first insulating layer is formed on a semiconductor substrate. A lower metal layer and a upper metal layer are sequentially formed on the first insulating layer, and also, a second insulating layer is formed thereon. Then, a photoresist pattern is formed, and the second insulating layer and the upper metal layer are etched with a mask of the patterned photoresist layer. Then, the patterned photoresist layer is removed, and a sidewall insulating layer is formed on a side of the upper metal layer. Finally, the lower metal layer is etched with a mask of the second insulating layer and the sidewall insulating layer.