The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
Dec. 21, 1993
Yasuyuki Higuchi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
There is provided a semiconductor device wherein a resistor layer is interposed between a semiconductor region and a surface electrode metal so as to improve a safe operation area of the device and enhance the secondary breakdown strength thereof, and a method for producing such a semiconductor device including steps of forming a n-type semiconductor region and/or a p-type semiconductor region in a semiconductor substrate by impurity doping; forming contact holes in a protective film formed on the semiconductor substrate; forming polysilicon electrode films on the semiconductor regions exposed in the contact holes, respectively; making respective impurities of the semiconductor regions diffuse into the polysilicon electrode films by a heat treatment; and forming a surface electrode metal on the polysilicon electrode films.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile