The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
May. 28, 1993
Mengistu Yemane-Berhane, Beaverton, OR (US);
Bruce L Colburn, Vancouver, WA (US);
Simco/Ramic Corporation, Medford, OR (US);
Abstract
A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.