The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1995
Filed:
Dec. 14, 1993
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor laser device includes a substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer having a conductivity type different from that of the first cladding layer, wherein at least one of the first and second cladding layers has a multiquantum barrier structure. The width of the first quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 24 to 100 nm, the width of the second quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 5 to 20 nm, and the multiquantum barrier structure is constituted by alternately stacking first thin layers consisting of In.sub.z (Ga.sub.1-x Al.sub.x).sub.1-z P (x is 0.7 to 1.0 and z is 0 to 1.0) and second thin layers consisting of In.sub.z (Ga.sub.1-y Al.sub.y).sub.1-z P (y is 0 to 0.3 and z is 0 to 1.0).