The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1995
Filed:
Jan. 14, 1994
Masaki Hirota, Kanagawa, JP;
Teruyoshi Mihara, Kanagawa, JP;
Nissan Motor Co., Ltd., Yokohama City, JP;
Abstract
A transistor circuit such as an integrated circuit contains at least first and second MOS transistors having drain electrode pair and source electrode pair, one of which is a pair of electrodes connected together and integrated into a common drain or source electrode, and the other of which is a pair of separate electrodes. In a semiconductor substrate, there are formed at least one common region, such as a drain contact region or a source region, connected with the common electrode, and a plurality of first and second individual regions selectively connected with the separate electrodes. Around the common region or each common region, a predetermined number of the individual regions are arranged in such a manner as to improve the thermal balance of the substrate and enable the downsizing of the device.