The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1995
Filed:
Apr. 20, 1994
Shigeru Hiramatsu, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A compound semiconductor device including a substrate; a first epitaxial layer formed on the substrate, the first epitaxial layer having an impurity concentration of 1.times.10.sup.15 .ltoreq.p.ltoreq.1.times.10.sup.16 (cm.sup.-3); and a second epitaxial layer formed on the first epitaxial layer for allowing travel of two-dimensional electrons, the second epitaxial layer having an impurity concentration of n.ltoreq.1.times.10.sup.14 (cm.sup.-3) and p.ltoreq.1.times.10.sup.14 (cm.sup.-3). With the device disclosed, it is difficult for a short channel effect due to a reduction in gate length to occur, thereby ensuring high characteristics of the compound semiconductor device.