The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1995
Filed:
Aug. 19, 1992
Fujitsu Limited, Kawasaki, JP;
Abstract
A quantum interference effect transistor comprising a semiconductor substrate, an n-type first semiconductor layer, a channel second semiconductor layer, an n-type third semiconductor layer, a gate electrode, a source electrode, a drain electrode, a source region and a drain region, said second semiconductor layer having an electron affinity larger than that of the first and third layers to generate a two dimensional electron gas channel, characterized in that the channel second layer between the source and drain regions consists of lead portions and a middle portion sandwiched with them, and in the middle portion the channel is divided into two channel passages without forming a separation layer in the second layer. The first, second and third layers form a quantum well structure. The middle portion of the second layer is thicker than the lead portions, so that a quantum well width at the middle portion is wider and has a larger amount of bending of a conduction band bottom Ec to divide an electron probability distribution into two parts with peaks.