The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1995
Filed:
Mar. 31, 1993
James C Baker, Coppell, TX (US);
Emily A Groves, Sachse, TX (US);
Douglas Paradis, Richardson, TX (US);
Charles P Monaghan, Garland, TX (US);
Barry Lanier, Allen, TX (US);
Thomas D Bonifield, Dallas, TX (US);
Julie S England, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of making a hybrid semiconductor device and the device comprising providing a semiconductor substrate having electrical devices therein, providing a first resilient layer of electrically insulating material over the substrate which can be disposed directly onto the substrate with a substantially planar exposed surface, providing a second resilient layer of electrically insulating material over the first resilient layer which can be disposed directly onto the first layer with a substantially planar exposed surface, the second layer having a relatively resilient state and a rigid state, providing resilient standoff from the third resilient layer at spaced locations on the second layer by removing predetermined portions of the third layer, securing a semiconductor superstrate to the semiconductor device, forming electrical devices on the superstrate, and then connecting the electrical devices on the superstrate to the electrical devices on the substrate.