The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 1995

Filed:

Mar. 04, 1994
Applicant:
Inventors:

Iraj E Shahvandi, Round Rock, TX (US);

Carol Gelatos, Austin, TX (US);

Leroy Grant, Jr, Austin, TX (US);

Assignee:

Motorola Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ;
U.S. Cl.
CPC ...
156643 ; 156656 ; 156345 ;
Abstract

A process for fabricating a semiconductor device is enhanced by providing a plasma etching process in which exposed metal surfaces within a plasma etching chamber (24) are protected by a ceramic layer (46). In the plasma etching process, a substrate (10) is placed on a platen (26) located within a plasma etching apparatus (22). A clamping device (40) secures the perimeter of the substrate (10) to the platen (26). The clamping device (40) includes a ceramic layer (46) overlying a metal base (44). When a plasma is ignited within the etching chamber (24), the ceramic layer (46) prevents physical contact of the plasma and the metal base (44) of the clamping device (40).


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