The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1995
Filed:
Aug. 30, 1993
Applicant:
Inventor:
Hisamitsu Suzuki, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437162 ; 437191 ; 257588 ;
Abstract
A double-layered structure of the base electrode corresponding to the emitter diffused-region 15 to be formed, which consists of the first and second conducting films 5, 6. This structure effects to prevent the surface of the silicon substrate in the emitter diffused-region to be formed from being etched away by the overetching for forming the base electrode, with much reduction of leakage current due to the consequent damage to the silicon-substrate surface in the emitter diffused-region to be formed, leading to improvement in transistor yield.