The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1995
Filed:
Oct. 27, 1993
Applicant:
Inventors:
Isao Matsui, Tokorozawa, JP;
Akio Ui, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
427583 ; 427595 ; 4272553 ; 4272552 ; 4272551 ; 437238 ;
Abstract
A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.