The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Jul. 24, 1991
Thomas Meister, Taufkirchen, DE;
Hans-Willi Meul, Bruckmuhl, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A bipolar transistor includes insulator structures defining an active transistor zone having a base, an emitter with a side facing away from the base, and a collector with a collector terminal having a side facing away from the base. The insulator structures are disposed on the sides of the emitter and the collector terminal facing away from the base, and the insulator structures limit current flow through the active transistor zone. A process for producing the bipolar transistor includes producing a collector by selective epitaxy on a zone of a substrate surrounded by insulators. A zone for the collector is defined with a spacer technique in the following steps: photolithographically producing a first opening in a first layer exposing a surface of a second layer; including at least one insulation layer in the second layer; producing spacers at edges of the first opening; and etching a second opening in the second layer defining the zone for the collector during selective back-etching of the spacers.