The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Apr. 26, 1994
Christine Anceau, Saint Roch, FR;
SGS-Thomson Microelectronics S.A., Gentilly, FR;
Abstract
A monolithic protection component is formed in a P-type low-doped semiconductor substrate. The protection diode comprises, in an upper surface of the substrate, a first and a second N-type well with a mean doping level; at the surface of the first well, a first highly doped P region; at the surface of the second well, a second very highly doped N region; a third very highly doped N region laterally contacting the first well; a fourth highly-doped P region beneath a portion of the lower surface of the third region; a first metallization contacting the surface of the first and second regions which constitute the first diode terminal; and a second metallization coupled to a P-type area extending up to the fourth region and second well, which forms the second terminal of the diode. The protection component provides a unidirectional protection diode. Two of the protection components may be combined in a single structure to provide a bidirectional protection diode.