The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 1995

Filed:

Jul. 01, 1994
Applicant:
Inventor:

Roger F Caldwell, Milpitas, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B44C / ;
U.S. Cl.
CPC ...
437228 ; 156643 ; 156626 ; 1566591 ; 156662 ; 437-8 ; 437225 ;
Abstract

A method for forming an alignment mark during semiconductor device manufacturing. A first area and a second area are provided on the semiconductor substrate wherein the second area is adjacent to the first area. An alignment mark is formed in the first area. A first layer is formed over the first area and the second area wherein the alignment mark is replicated in the first layer. The first layer is then removed from the second area and left over the first area. A globally planarized second layer, is formed over the first area and the second area. The second layer is then removed from the first area and is left over the second area.


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