The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Feb. 17, 1993
Takashi Fukusho, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
To manufacture a charge transfer device, a first insulating film is deposited on a surface of a semiconductor substrate as a charge transfer region for transferring charge packets therein in one direction. Then, a plurality of first transfer electrodes are deposited on the first insulating film, the first transfer electrodes being spaced from each other, and a portion of each of the first transfer electrodes is removed to shape each of the first transfer electrodes into a staircase configuration. Thereafter, a first impurity is ion-implanted into the surface of the semiconductor substrate to create an impurity-diffused region therein which includes first and second different-potential subregions underneath each of the first transfer electrodes and a different-potential subregion underneath each of areas of the first insulating film between the first transfer electrodes. After the first impurity is ion-implanted, a mask is deposited on portions of the areas of the first insulating film and on side portions of the first transfer electrodes, and a second impurity is ion-implanted into the surface of the semiconductor substrate to divide the different-potential subregion underneath each of the areas into third and fourth different-potential subregions.