The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 1995

Filed:

Jun. 10, 1994
Applicant:
Inventors:

Mohammed Anjum, Austin, TX (US);

Ibrahim Burki, Austin, TX (US);

Craig W Christian, Buda, TX (US);

Assignee:

Advanced Micro Devices, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437190 ; 437 24 ; 437192 ; 437200 ; 437933 ; 148D / ; 148D / ; 148D / ; 148D / ;
Abstract

A method is provided for reducing growth of silicide and the temperatures necessary to produce silicide. Germanium is implanted at a concentration peak density depth below the midline and above the lower surface of a metal layer receiving the implant. Subsequent anneal causes germanide to occupy an area above growing silicide such that consumption of silicon atoms is reduced, and that silicide is formed to a controlled thickness.


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