The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Jan. 05, 1994
Applicant:
Inventor:
Winston K Chan, Fair Haven, NJ (US);
Assignee:
Bell Communications Research, Inc., Livingston, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 22 ; 437 86 ; 437912 ; 437913 ; 148D / ; 148D / ;
Abstract
A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.
Chan, Winston. (1995). Method of fabricating a field-effect transistor over gate electrode (U.S. Patent No. 5401665). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5401665
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile