The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Jun. 01, 1993
Hideki Goto, Ibaraki, JP;
Kenji Shimoyama, Ibaraki, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A method of preparing a compound semiconductor is carried out, by introducing the group III organic metals gas and/or the hydrides containing group V elements, or group V organic metals gas into a growth chamber, in addition to a carrier gas and an etching gas, in a method of preparing a group III-V compound semiconductor including the process to effect the gas etching of a single crystal sustrate surface and/or a single crystal thin-film surface in the growth chamber, just before a vapor phase growth of a compound semiconductor thin-film is performed, using the hydrides and the organic metals gas. According to the present invention, the impurity pollution, the oxide film, the thermometamorphism and the hike, in an interface between the single crystal substrate and the epitaxial layer as well as in the regrown interface can be removed, thereby making it possible to get a clean surface of the interface and to restrain the accumulation or the depletion of carrier-concentration which has not been intended. As a result, the quality of the device can be greatly improved as compared with that of the one obtained by a usual preparing method.