The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 1995

Filed:

Mar. 02, 1993
Applicant:
Inventor:

Teruhiko Tamori, Iruma, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K / ;
U.S. Cl.
CPC ...
73862046 ; 382-4 ;
Abstract

A surface pressure distribution matrix of detecting elements requires no positioning operation during a manufacturing process and does not vary in sensitivity depending on where surface pressure is applied to the matrix. A large number of transistors in a matrix form are formed on a single semiconductor substrate. A flexible film having a conductive coating is formed over the matrix of detecting elements. The collector electrodes of a plurality of transistors are commonly connected to each other to form rows in the matrix, each row being electrically isolated from the other rows. The base electrodes of the plurality of transistors are commonly connected to each other to form columns in the matrix, each column being electrically isolated from the other columns. When the flexible film receives a surface pressure from the ridges of a fingerprint, the depressed portions of the conductive coating on the film are brought into contact with the matrix of detecting elements. As a result, the transistors in the matrix turn on in the pattern of the fingerprint ridges. Shift registers scan the on/off states in the matrix of transistors to detect the fingerprint pattern. One embodiment uses bipolar transistors. Another embodiment uses MOS field effect transistors.


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