The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1995
Filed:
Feb. 17, 1994
Tsuyoshi Koga, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A LOCOS oxide film is provided in a main surface of a semiconductor substrate for isolating an element region from another element region. A channel cut layer formed of a P-type impurity is provided under the element region. A P.sup.+ impurity region having a concentration thicker than that of P-type impurity of channel cut layer is formed directly under a bird's beak portion of LOCOS oxide film in the main surface of semiconductor substrate. Therefore, an isolation breakdown voltage of an N-channel transistor region is increased.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile