The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1995
Filed:
Jan. 26, 1994
Yuuichi Hasegawa, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A field effect semiconductor device which restricts current flow through a drain-gate path, but allows current to easily flow through a gate-source path. A high potential barrier layer is formed on the drain side of an active layer. The potential barrier layer has a wider energy band gap than the active layer. A source electrode and a drain electrode make ohmic contact with the active layer and a gate electrode exists between the source electrode and the drain electrode. The gate electrode is partially formed on the potential barrier layer and makes Schottky contact with the active layer on the source side of the semiconductor device and makes Schottky contact with the potential barrier layer on the drain side of the semiconductor device.