The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1995
Filed:
Dec. 24, 1992
Hirohito Watanabe, Tokyo, JP;
Sadayuki Ohnishi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A thermal oxidation method for producing a semiconductor device having a capacitor insulating film structure capable of making a thin film having a small leakage current and small temperature dependence of the leakage current. In the insulating film, a silicon nitride film with a small electron mobility and a silicon oxide film with a small hole mobility are alternately laminated in order of the nitride film/oxide film/nitride film/oxide film from a lower electrode side. A current component such as electrons flowing in this insulating film structure is limited by the layer with the smaller mobility to reduce the leakage current. An oxide film thickness of approximately several .ANG. can thus be strictly controlled. By forming the silicon nitride film between the high dielectric oxide film and the electrode, the reaction of the silicon electrode and the high dielectric oxide film can be prevented.