The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 1995

Filed:

Dec. 18, 1992
Applicant:
Inventors:

Satoshi Hamamoto, Itami, JP;

Mikio DeGuchi, Itami, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-4 ; 136258 ; 148D / ; 437-2 ; 437233 ; 437234 ; 437966 ; 437967 ; 437974 ;
Abstract

In a method of producing a thin-film solar cell, a graphite sheet in which the breaking stress in a thickness direction is smaller than the breaking stress in a direction perpendicular to the thickness direction is adhered to a heat resistant substrate, a semiconductor thin film is formed on the graphite sheet in a high temperature process, a second substrate for supporting the semiconductor thin film is adhered to the semiconductor thin film, and the graphite sheet is broken by applying a mechanical stress to the heat resistant substrate and the second substrate. The semiconductor thin film is reliably supported by the heat resistant substrate during high temperature processing and easily removed from the heat resistant substrate by breaking the graphite sheet. In addition, since the graphite sheet has an anisotropic breaking stress, fragments of the graphite sheet remaining on the surface of the semiconductor thin film are easily removed. As a result, a high quality thin film solar cell is produced reliably at low cost.


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