The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1995
Filed:
Sep. 14, 1993
Rolf E Hummel, Gainesville, FL (US);
Sung-Sik Chang, Gainesville, FL (US);
University of Florida, Gainesville, FL (US);
Abstract
A high frequency, high voltage spark generator is used to create a large number of sparks to erode the surface of a silicon wafer to a depth of up to 100 microns. After a sufficient amount of erosion has occurred, but prior to any macro-scale removal of material, the surface layer of the silicon wafer becomes porous and photoluminescing. The method can be performed in ambient atmosphere and temperature, or in specific gas atmospheres and at different temperatures. The method produces photoluminescing porous silicon layers on p-type, n-type, low-doped, high-doped or undoped silicon wafers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile