The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1995
Filed:
Feb. 06, 1990
Timothy W Gee, Cary, NC (US);
International Business Machines Corp., Armonk, NY (US);
Abstract
A line protection circuit for an ISDN device includes a pair of identical, NMOS field effect transistors connected between the device and opposite terminals of one winding of an isolation transformer. Each device has one N region connected to an output line from the ISDN device, a second N region connected to one winding terminal, a grounded channel or P region and a gate connected to a source of positive logic voltage. During normal operation, the FETs pass current provided by a constant current source within the ISDN device without attenuation. If a power surge occurs elsewhere in the ISDN network, the voltage at one of the FETs is be clamped to ground while the voltage at the other FET rises only until FET cut-off occurs. If power is removed from the FETs, at least one PN junction will always be reverse biased to isolate the protected ISDN device from the remainder of the network.