The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 1995

Filed:

Sep. 13, 1993
Applicant:
Inventors:

James E Dunning, Austin, TX (US);

James R Lundberg, Austin, TX (US);

Richard S Ramus, Austin, TX (US);

James G Gay, Pflugerville, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
326 68 ; 326 57 ; 326 21 ; 327534 ;
Abstract

An output driver circuit has a circuitry portion (70) which is used to generate a Drive-Hi control signal in response to an Output Enable, an optional Precondition signal, and a Data Input signal. A circuit portion (75) ensures that the Drive-Hi control signal is maintained at a voltage which is substantially equal to Vdd when the Output Enable is deactivated. Circuit portion (80) selectively controls the Data Output by driving Vdd onto the Data Output in response to the Drive-Hi control signal being activated. A circuit portion (100) functions to selectively drive the Data Output to a logic zero (ground potential) when a Drive-Lo signal is asserted. Circuit portions (90 and 95) generate the Drive-Lo signal in response to the Output Enable, the optional Precondition signal, and the Data Input signal. In general, the output driver circuit allows an integrated circuit powered at a first voltage to interface to another integrated circuit which is powered at a higher second voltage without loss of performance, without excessive leakage currents, without crossover current, and without increasing gate oxide stresses.


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