The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 1995

Filed:

Jul. 31, 1992
Applicant:
Inventors:

Yong-Bo Park, Kyungki, KR;

Byeong-Yun Kim, Seoul, KR;

Hyung-Kyu Lim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; G11C / ;
U.S. Cl.
CPC ...
327543 ; 36518909 ; 365198 ; 365226 ; 327546 ; 327538 ; 327530 ;
Abstract

An internal power voltage generating circuit of a semiconductor memory device may be constructed with a voltage sensing circuit (100) and a reference voltage controller (300) providing an internal power voltage int. V.sub.CC of a given reference voltage amplitude V.sub.ref and an external power voltage amplitude ext. V.sub.CC. Thus, when a high voltage over an operating voltage of a chip is applied to a pad (10) of the chip, the internal power voltage is raised to the level of the external power voltage. Therefore, when stress is added to the chip during a 'burn-in-test', the defective chip is easily detected. Consequently, the reliability of those semiconductor memory devices subjected to post-manufacturing testing can be improved.


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