The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1995
Filed:
Jan. 24, 1994
Applicant:
Inventor:
Naoto Matsuo, Ibaraki, JP;
Assignee:
Matsushita Electric Industrial Co. Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257310 ; 257532 ; 257767 ;
Abstract
A semiconductor memory device in which a protection layer is disposed between a silicon storage electrode and a tantalum pentoxide dielectric layer. A conductive material having a larger free energy of oxide formation than that of the tantalum pentoxide is used for forming the protection layer. Therefore, no native oxide film is formed at the interface between the storage electrode and the dielectric layer. As a result, the dielectric constant of the dielectric layer does not decrease even when the dielectric layer is a thin film.