The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1995
Filed:
Mar. 31, 1994
Applicant:
Inventors:
K S Ravindhran, San Antonio, TX (US);
Yu P Han, Dallas, TX (US);
Ravi Jhota, San Antonio, TX (US);
Walter D Parmantie, San Antonio, TX (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
437 27 ; 437 29 ; 437 41 ;
Abstract
After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.