The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 1995

Filed:

Sep. 09, 1992
Applicant:
Inventors:

Atsushi Yoshinouchi, Kashiba, JP;

Tatsuo Morita, Kyoto, JP;

Shuhei Tsuchimoto, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
25049221 ; 350397 ;
Abstract

An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.


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Yoshinouchi, Atsushi. (1995). Ion implantation apparatus (U.S. Patent No. 5393986). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5393986

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