The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1995
Filed:
Jun. 18, 1993
Masashi Usami, Tokyo, JP;
Yuichi Matsushima, Tokorozawa, JP;
Kokusai Denshin Denwa Kabushiki Kaisha, Tokyo, JP;
Abstract
A multiple quantum well structure which permits substantially uniform injection of carriers from the outside into respective quantum well layers of the multiple quantum well and a semiconductor device employing such a multiple quantum well structure. A multiple quantum well structure is formed by laminating at least two pairs of quantum well layers each having a thickness substantially equal to the de Broglie's wave-length of electrons and barrier layers of an energy gap greater than that of the quantum well layers, and the multiple quantum well structure is doped with at least one of p-type and n-type impurities in a manner to slope the energy band of the entire multiple quantum well structure so that carriers injected thereinto are distributed uniformly throughout it.