The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1995
Filed:
Jun. 29, 1993
Kazuyoshi Muraoka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor memory device comprises: a first bit line connected to a memory cell via a first switching element; a second bit line connected to a reference cell via a second switching element; a reference potential writing circuit for writing a reference potential in the reference cell; an equalizing circuit for equalizing the first and second bit lines in potential; a sense amplifier for detecting data in the memory cell on the basis of a difference in potential between the first and second bit lines; and a control section for reading data in the memory cell and data in the reference cell to the first bit line and the second bit line, respectively, and thereafter for activating the sense amplifier and roughly simultaneously turning off the second switching element. In the semiconductor memory device, the reference cell writing potential can be stabilized without fluctuations for higher operation reliability; the operating current can be reduced for lower current consumption; and the cycle time can be reduced for higher speed operation.