The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 1995

Filed:

Mar. 16, 1994
Applicant:
Inventors:

Patrick M Sullivan, San Diego, CA (US);

Pat H Reaves, Escondido, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257635 ; 257 77 ; 257676 ; 257758 ; 257763 ; 257774 ; 257776 ;
Abstract

Diamond is used as a dielectric layer to separate the metalization layers multichip module substrates. The diamond has use for both electrical and thermal conduction. Such multichip module substrates may have a diamond base, or a base constructed from silicon, aluminum nitride, molybdenum, or any other material supportive of the nucleation and growth of diamond films. The metalization may be molybdenum or other conductor supportive of the nucleation and growth of diamond films. Using diamond as an interlayer dielectric in a multichip system permits a significant increase in the amount of power that can be dissipated by the system. The diamond does not obstruct the system's metalization, so that routing density can be increased and interconnection length may be decreased, enhancing host chip operation.


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