The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1995
Filed:
Oct. 22, 1993
Philip Walker, Redhill, GB;
David H Paxman, Redhill, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor body (1) has a first region (2) of one conductivity type adjacent one major surface (3). Second and third regions (5 and 6) of the opposite conductivity type are provided within the first region (2) adjacent the one major surface (3) and an insulated gate structure (80) overlies a conduction channel region (9) between the second and third regions (5 and 6) for providing a gateable connection along the length (L) of the conduction channel region (9) between the second and third regions (5 and 6). The insulated gate structure (80) has a gate insulating region (81) and a gate conductive region (82) extending on the gate insulating region (81) and up onto a relatively thick insulating region (4) adjoining the gate insulating region (81). The gate insulating region (81) overlaps with the periphery (6a) of the portion (62) of the third region (6) adjacent the insulated gate structure (80) so that, in a direction (D) transverse to the length (L) of the conduction channel region (9), the gate conductive region (82) extends from the gate insulating region (81) up onto the relatively thick insulating region (4) over the first region (2). The corner (10b) at which the gate insulating region (81) adjoins the relatively thick insulating region (4) thus lies over the first region (2) and not over the third region (6), thereby reducing the electric field stress at the corner (10b).