The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1995
Filed:
Dec. 10, 1993
Applicant:
Inventor:
Yasutaka Kohno, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ; 257284 ;
Abstract
A compound semiconductor device includes a plurality of epitaxial compound semiconductor layers including an InGaAs layer as the uppermost layer disposed on a semi-insulating compound semiconductor substrate, a groove penetrating through at least the InGaAs layer, an insulating film disposed on the side surfaces of the groove and having ends extending beyond the groove, a gate electrode disposed in the groove and on the insulating film, and source and drain electrodes on the InGaAs layer at opposite sides of the groove self-aligned with the ends of the insulating film.