Strained quantum well type semiconductor laser device

Abstract

There is provided a strained quantum well layer semiconductor laser device that shows an improved temperature dependency of the threshold current and a high frequency performance while maintaining an excellent low threshold current operability. A strained quantum well layer type semiconductor laser device according to the invention comprises a light emitting active layer 14 of a multilayer structure including a quantum well layer 14a and a barrier layer 14c and a pair of light confining layers 13, 15, respectively laid on and under the active layer, the quantum well layer being made of InAs.sub.y P.sub.1-y (0<y.ltoreq.1), the barrier layer and/or the light confining layers being made of In.sub.1-x Ga.sub.x P (0<x.ltoreq.1). Such a device shows an improved temperature dependency of the threshold current and a high frequency performance, while maintaining an excellent low threshold current operability because of the structural features of its active layer.