The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1995
Filed:
Oct. 01, 1992
Seiji Ochi, Itami, JP;
Hirotaka Kizuki, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A high-speed semiconductor device includes an emitter layer serving as an injection source of hot electrons and a collector barrier layer disposed between a base layer and a collector layer. The potential profile of the collector barrier layer gradually varies from a region in the vicinity of the boundary between the base layer and the collector barrier layer whereby reflection of electrons at the collector barrier layer is significantly reduced. Therefore, current density in the ON state of the device is increased without damaging the high speed characteristics of the device, and current density in the OFF state of the device is decreased, resulting in a high-performance and high-speed semiconductor device.