The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1995
Filed:
Feb. 24, 1993
Robert P Bryan, Boulder, CO (US);
Gregory R Olbright, Boulder, CO (US);
Thomas M Brennan, Albuquerque, NM (US);
Jeffrey Y Tsao, Albuquerque, NM (US);
Abstract
A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.