The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1995
Filed:
Mar. 01, 1993
Applicant:
Inventors:
Takanobu Kamakura, Yokosuka, JP;
Youji Yamashita, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 10 ; 437 12 ; 437 11 ; 437939 ; 437946 ; 437105 ; 148D / ;
Abstract
A method of manufacturing a semiconductor substrate in which a damage layer is formed on one surface of a wafer. An etching protection film is formed on the damage layer. An epitaxial layer is formed on the other surface of the wafer. Thereafter, the etching protection film is removed to expose the damage layer. The exposed damage layer enhances gettering ability.